1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c90 t c = 90 c45a i cm t c = 25 c, 1 ms 180 a ssoa v ge = 15 v, t j = 125 c, r g = 5 i cm = 90 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ge = 720 v; v ge = 15 v, r g = 5 10 s p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247) 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1.0 ma, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 36v i ces v ce = 0.8 ? v ces 50 a note 1 t j = 125 c 2.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90, v ge = 15 v 2.5 3.0 v note 2 t j = 125 c 2.6 v features epitaxial silicon drift region - fast switching - small tail current mos gate turn-on for drive simplicity applications ac motor speed control dc servo and robot drives uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies welding 98713a (7/00) g = gate c = collector s = emitter tab = collector to-247 ad (ixsh) (tab) to-268 ( ixst) (tab) g e ixsh 45n120b ixst 45n120b i c25 = 75 a v ces = 1200 v v ce(sat) = 3.0 v high voltage igbt "s" series - improved scsoa capability g c e ixys reserves the right to change limits, test conditions, and dimensions. preliminary data
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 16 23 s note 2 c ies 3300 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 240 pf c res 65 pf q g 120 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 40 nc q gc 45 nc t d(on) 36 ns t ri 27 ns t d(off) 360 500 ns t fi 380 750 ns e off 13 22 mj t d(on) 38 ns t ri 29 ns e on 2.9 mj t d(off) 440 ns t fi 700 ns e off 22 mj r thjc 0.42 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v r g = 5 v ce = 0.8 v ces note 3 inductive load, t j = 25 c i c = i c90 , v ge = 15 v r g = 5 v ce = 0.8 v ces note 3 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g . ixsh 45n120b ixst 45n120b to-247 ad (ixsh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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